PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
BDP 952
PNP Silicon AF Power Transistor • For AF drivers and output stages • High collector current • High current gain ...
BDP 952
PNP Silicon AF Power
Transistor For AF drivers and output stages High collector current High current gain Low collector-emitter saturation voltage Complementary type: BDP951...BDP955 (
NPN)
Type BDP 952 BDP 954 BDP 956
Marking Ordering Code BDP 952 Q62702-D1340 BDP 954 Q62702-D1342 BDP 956 Q62702-D1344
Pin Configuration 1=B 1=B 1=B 2=C 2=C 2=C 3=E 3=E 3=E 4=C 4=C 4=C
Package SOT-223 SOT-223 SOT-223
Maximum Ratings Parameter Collector-emitter voltage BDP 952 BDP 954 BDP 956 Collector-base voltage BDP 952 BDP 954 BDP 956 Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 99°C Junction temperature Storage temperature Thermal Resistance Junction ambient
1)
Symbol
Values 80 100 120
Unit V
VCEO
VCBO
100 120 140
VEBO IC ICM IB IBM Ptot Tj Tstg RthJA RthJS
1
5 3 5 200 500 W 150 - 65 ... + 150 ≤ 42 ≤ 17 °C mA A
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group
Nov-28-1996
BDP 952
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics
Collector-emitter breakdown voltage
Values typ. max.
Unit
V(BR)CEO
V 80 100 120 100 20 100 25 40 15 475 V 0.8 1.5 nA µA nA -
IC = 10 mA, IB = 0 mA, BDP 952 IC = 10 mA, IB = 0 mA, BDP 954 IC = 10 mA, IB = 0 mA, BDP 956
Collector-base breakdown voltage
V(BR)CBO
IC = 100 µA, IB = 0 , BDP 952 IC = 100 µA, IB = 0 , BDP 954 IC = 100 µA, IB...
