BDP949

BDP 947 NPN Silicon AF Power Transistors For AF drivers and output stages High collector current High current gain Low collector-emitter saturation voltage Complementary type: BDP948, BDP950 (PNP) Type BDP 947 BDP 949 Marking Ordering Code BDP 947 Q62702-D1335 BDP 949 Q62702-D1337 Pin Configuration 1=B 1=B 2=C 2=C 3=E 3=E 4=C 4=C Package SOT-223 SOT-223 Maximum Ratings Parameter Collector-emitter voltage BDP 947 BDP 949 Collector-base voltage BDP 947 BDP 949 Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 99°C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Symbol Values 45 60 Unit V VCEO VCBO 45 60 VEBO IC ICM IB IBM Ptot Tj Tstg RthJA RthJS 5 3 5 200 500 3 150 - 65 ... + 150 ≤ 42 ≤ 17 W °C mA A K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu Semiconductor Group 1 Nov-28-1996 BDP 947 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO V 45 60 100 20 100 25 85 50 475 V 0.5 1.3 nA µA nA - IC = 10 mA, IB = 0 mA, BDP 947 IC = 10 mA, IB = 0 mA, BDP 949 Collector-base breakdown voltage V(BR)CBO IC = 100 µA, IB = 0 , BDP 947 IC = 100 µA, IB = 0 , BDP 949 Base-emitter breakdown voltage 45 60 V(BR)EBO 5 IE = 10 µA, IC = 0 Collector cutoff current ICBO - VCB = 45 V, IE = 0 , TA ...