BDP947

BDP947, BDP949 Silicon NPN Transistor
For AF driver and output stages
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: BDP948, BDP950 (PNP) 4 3 2 1 VPS05163 Type BDP947 BDP949 Maximum Ratings Parameter Marking BDP 947 BDP 949 1=B 1=B Pin Configuration 2=C 2=C 3=E 3=E 4=C 4=C Package SOT223 SOT223 Symbol VCEO VCBO VEBO BDP 947 45 45 5 3 5 200 500 3 150 BDP 949 60 60 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 99 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg A mA W °C -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS
17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-06-2001 BDP947, BDP949 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 45 V, IE = 0 Collector cutoff current VCB = 45 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 10 mA, VCE = 5 V IC = 500 mA, VCE = 1 V IC = 2 A, VCE = 2 V Collector-emitter saturation voltage1) IC = 2 A, IB = 0.2 A Base-emitter saturation voltage ...