DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D067
BD825; BD829 NPN power transistors
Product specification Supe...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D067
BD825; BD829
NPN power
transistors
Product specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC04 1998 May 29
Philips Semiconductors
Product specification
NPN power
transistors
FEATURES High current (max. 1 A) Low voltage (max. 80 V). APPLICATIONS General purpose Driver stages in hi-fi amplifiers and television circuits. DESCRIPTION
NPN power
transistor in a TO-202; SOT128B plastic package.
PNP complements: BD826 and BD830.
handbook, halfpage
BD825; BD829
PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION
2 3 1
1 2 3
MAM305
Fig.1
Simplified outline (TO-202; SOT128B) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BD825 BD829 VCEO collector-emitter voltage BD825 BD829 ICM Ptot hFE fT peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C Tmb ≤ 50 °C IC = 150 mA; VCE = 2 V IC = 50 mA; VCE = 5 V; f = 100 MHz open base − − − − − 95 − − − − − − − 250 45 80 1.5 2 8 165 − MHz V V A W W CONDITIONS open emitter − − − − 45 100 V V MIN. TYP. MAX. UNIT
1998 May 29
2
Philips Semiconductors
Product specification
NPN power
transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BD825 BD829 VCEO collector-emitter voltage BD825 BD829 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak col...