Data Sheet
January 2002
IRFP240
20A, 200V, 0.180 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon ...
Data Sheet
January 2002
IRFP240
20A, 200V, 0.180 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect
transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17422.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP240
TO-247
IRFP240
NOTE: When ordering, include the entire part number.
Features
20A, 200V rDS(ON) = 0.180Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance ...