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BD676A

ON Semiconductor

DARLINGTON POWER TRANSISTORS PNP SILICON

BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG Plastic Medium-Power Silicon PNP Darlingtons This se...



BD676A

ON Semiconductor


Octopart Stock #: O-125358

Findchips Stock #: 125358-F

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Description
BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG Plastic Medium-Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features High DC Current Gain Monolithic Construction BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681 BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage BD676G, BD676AG BD678G, BD678AG BD680G, BD680AG BD682G, BD682TG VCEO Vdc 45 60 80 100 Collector-Base Voltage BD676G, BD676AG BD678G, BD678AG BD680G, BD680AG BD682G, BD682TG VCB Vdc 45 60 80 100 Emitter-Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VEB 5.0 Vdc IC 4.0 Adc IB 0.1 Adc PD 40 W 0.32 W/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction−to−Case RqJC 3.13 Unit °C/W http://onsemi.com 4.0 AMP DARLINGTON POWER TRANSISTORS PNP SILICON 45, 60, 80, 100 VOLT...




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