BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G
Plastic Medium-Power Silicon NPN Darlingtons
This series of p...
BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G
Plastic Medium-Power Silicon
NPN Darlingtons
This series of plastic, medium−power silicon
NPN Darlington
transistors can be used as output devices in complementary general−purpose amplifier applications.
Features
High DC Current Gain Monolithic Construction Complementary to BD676, 676A, 678, 678A, 680, 680A, 682 BD677, 677A, 679, 679A are Equivalent to MJE 800, 801, 802, 803 These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage BD675G, BD675AG BD677G, BD677AG BD679G, BD679AG BD681G
VCEO
Vdc
45
60
80
100
Collector−Base Voltage BD675G, BD675AG BD677G, BD677AG BD679G, BD679AG BD681G
VCBO
Vdc
45
60
80
100
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ TC = 25°C Derate above 25°C
VEBO IC IB PD
5.0 4.0 1.0
40 0.32
Vdc Adc Adc
W W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg – 55 to + 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction−to−Case RqJC
3.13
Unit °C/W
http://onsemi.com
4.0 AMPERES POWER
TRANSISTORS
NPN SILICON 60, 80, 100 VOLTS, 40 WATTS
COLLECTOR 2, 4
BASE 3
EMITTER 1
123
TO−225 CASE 77−09
STYLE 1
MARKING DIAGRAM...