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BD670

STMicroelectronics

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s SGS-THOMSON PREFERRED S...


STMicroelectronics

BD670

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Description
BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications The complementary PNP types are BD678, BD678A, BD680, BD680A and BD682 respectively. SOT-32 3 2 1 INTERNAL SCHEMATIC DIAGRAM R 1 Typ.= 7K Ω R 2 T yp.= 230 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P t ot T stg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 C Storage Temperature Max. O perating Junction Temperature o Value BD677/A BD678/A 60 60 BD679/A BD680/A 80 80 5 4 6 0.1 40 -65 to 150 150 BD681 BD682 100 100 Uni t V V V A A A W o o C C For PNP types voltage and current values are negative. September 1997 1/6 BD677/677A/678/678A/679/679A/680/680A/681/682 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.12 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC u...




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