CAS325M12HM2

CAS325M12HM2 1.2 kV, 3.7 mΩ All-Silicon Carbide High-Performance, Half-Bridge Module C2M MOSFET and Z-RecTM Diode VDS 1.2 kV Esw, Total @ 600 V, 300 A 9.3 mJ RDS(on) 3.7 mΩ Features Ultra-Low Loss, Low (5 nH) Inductance Ultra-Fast Switching Operation Zero Reverse Recovery Current from Diode Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation AlSiC Baseplate and Si3N4 AMB Substrate Ease of Paralleling High-Temperature Packaging, TJ(max) = 175 °C AS9100 / ISO9001 Certified Manufacturing System Benefits Enables Compact and Lightweight Systems High-Efficiency Operation Reduced Thermal Requirements Applications High-Efficiency Converters / Inverters Motor & Traction Drives Smart-Grid / Grid-Tied Distributed Generation Package 65 mm x 110 mm x 10 mm Part Number CAS325M12HM2 Package Half-Bridge Module Marking CAS325M12HM2 Datasheet: CAS325M12HM2, R...