VDS 1200 V
C3M0075120J
ID @ 25˚C
30 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 75 mΩ
N-Channel Enhancement Mode
Features
Package
C3MTM SiC MOSFET technology
Low impedance package with driver source pin
7mm of creepage distance between drain and source
High blocking voltage with low on-resistanc...
