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C3M0030090K

Part Number	C3M0030090K
Manufacturer	CREE
Description	Silicon Carbide Power MOSFET
Published	Mar 23, 2018
Detailed Description	VDS 900 V C3M0030090K ID @ 25˚C 73 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 30 mΩ N-Chann...
Datasheet	C3M0030090K PDF File

Overview

VDS 900 V C3M0030090K ID @ 25˚C 73 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 30 mΩ N-Channel Enhancement Mode Features Package • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency Applications • Solar inverters ...

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