SKJD850N65

SKJF(H&D)850N65 SJMOS N-MOSFET 650V, 0.73Ω, 5A Features Skysilicon Super_Junction Gen1 technology Much lower Ron*A performance for On-state efficiency Much lower FOM for fast switching efficiency Applications LED/LCD/PDP TV and monitor Lighting Solar/Renewable/UPS-Micro Inverter System Charger Power Supply Product Summary VDS RDS(on)_typ ID 650V 0.73Ω 5A 100% Avalanche Tested Package Marking and Ordering Information Part # SKJF(H&D)850N65 Marking - Package Packing TO-220 Tube Reel Size N/A Tape Width N/A Qty 50pcs Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C TC = 100°C Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=60mH, Rg=30Ω) Gate-Source voltage Power dissipation (TC = 25°C) Operating junction and storage temperature Symbol VDS Value 650 Unit V ID ID pulse EAS VGS Ptot Tj , T stg 5 2.5 20 76 ±30 49 -55...+150 A A mJ V W °C Rev 1.0 ©Sk...