FNK75N45
N-Channel Trench Power MOSFET
General Description
The FNK75N45 is N-channel MOS Field Effect Transistor desig...
FNK75N45
N-Channel Trench Power MOSFET
General Description
The FNK75N45 is N-channel MOS Field Effect
Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.
Features
● VDS=75V; ID=65A@ VGS=10V; RDS(ON)<8.25mΩ @ VGS=10V
● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance ● High UIS and UIS 100% Test
Application
● 64V E-Bike Controller Applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply
Top View
Top View
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK75N45
FNK75N45
Reel Size -
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V)
VGS Gate-Source Voltage (VDS=0V)
ID (DC)
Drain Current (DC) at Tc=25℃
ID (DC) IDM (pluse)
Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-P...
