FNK N-Channel Enhancement Mode Power MOSFET
FNK01N15T
Description
The FNK01N15T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =100V,ID =150A RDS(ON) <5.7mΩ @ VGS=10V
(Typ:5.0? mΩ)
● High density cell design for ultra low Rdson ● Fully...
