N-Channel Power MOSFET
FNK22001AF
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK22001AF uses advanced trench technology and d...
Description
FNK22001AF
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK22001AF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =80V,ID =180A RDS(ON) <3.7mΩ @ VGS=10V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Schematic diagram
Application
● Automotive applications ● Hard switched and high frequency circuits ● Uninterruptible power supply
To-220 Top View
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK22001AF FNK22001AF
TO-220
Reel Size -
Tape width -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous...
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