FNK3710

FNK3710 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK3710 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID =100A RDS(ON) < 18mΩ @ VGS=10V (Typ:14mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply To-220 Top View Package Marking and Ordering Information Device Marking Device Device Package FNK3710 FNK3710 TO-220 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID D...