FNK3085

FNK P-Channel Enhancement Mode Power MOSFET FNK3085 Description TheFNK3085 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-30V,ID =-85A R DS(ON) < 10.2mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Battery and loading switching Schematic diagram TO-220FB-3L top view Package Marking and Ordering Information Device Marking Device Device Package FNK3085 FNK3085 TO-220 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Pulsed Drain Current Maximum Power Dissipation IDM PD Derating factor Single pulse avalanche energy (Note 5) E...