P-Channel Power MOSFET
FNK P-Channel Enhancement Mode Power MOSFET
FNK3070PC/D
Description
The FNK3070PC/D uses advanced trench technology an...
Description
FNK P-Channel Enhancement Mode Power MOSFET
FNK3070PC/D
Description
The FNK3070PC/D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS=-30V, ID=-70A
R DS(ON) < 8.3 mΩ @ VGS=-10V
Schematic diagram
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Application
● Battery and loading switching
TO-251 top view
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
3070PC
FNK3070PC TO-251(SIPARK)
3070PD
FNK3070PD TO-252(DPARK)
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continu...
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