FNK3035P

FNK3035P FNK P-Channel Enhancement Mode Power MOSFET Description TheFNK3035P uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-30V, ID=-35A R DS(ON) < 10 mΩ @ VGS=-10V D G S Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Battery and loading switching Marking and pin assignment Top View DFN5X6 Bottom View PIN1 Package Marking and Ordering Information Device Marking Device Device Package FNK3035P FNK3035P DFN 5x6 -8L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Pu...