N-Channel Power MOSFET
FNK3416
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK3416 uses advanced trench technology to provide ...
Description
FNK3416
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
General Features
● VDS = 20V,ID =6A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) <22mΩ @ VGS=4.5V ESD Rating: 2000V HBM
● High Power and current handing capability ● Lead free product is acquired ● Surface mount package
Schematic diagram Marking and pin assignment
Application
● PWM application ● Load switch
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
3416
FNK3416
SOT-23
Reel Size Ø180mm
Tape width 8mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous Drain Current-Pulsed (Note 1)
ID IDM
Maximum Pow...
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