FNK22001A
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK22001A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =85V,ID =210A RDS(ON) <4.1mΩ @ VGS=10V
● High density cell design for ultra low Rdson ● Fully characterized ava...
