FNK N-Channel Enhancement Mode Power MOSFET
FNK11N03D
Description
The FNK11N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =30V,ID =110A RDS(ON) <3.6mΩ @ VGS=10V
(Typ: 2.7mΩ)
Schematic diagram
● High density cell design for ultra ...
