FNK0203EB

FNK0203EB FNK N-Channel Enhancement Mode Power MOSFET Description The FNK0203EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =15A RDS(ON) <13.5mΩ @ VGS=2.5V R DS(ON) < 9.5mΩ @ VGS=4.5V ESD Rating: 2500V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● Uni-directional load switch ● Bi-directional load switch Schematic diagram Marking and pin assignment DFN2*3-6 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size FNKEBX FNK0203EB DFN2*3-6 - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuou...