N-Channel Enhancement Mode Power MOSFET
Description
The FNK2012E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
General Features
● VDS = 20V,ID =8A R DS(ON) < 17mΩ @ VGS=2.5V R DS(ON) < ...
