ME7806S-G
N-Channel 30V (D-S) MOSFET Integrated Schottky Diode
GENERAL DESCRIPTION
The ME7806S N-Channel logic enhancem...
ME7806S-G
N-Channel 30V (D-S) MOSFET Integrated
Schottky Diode
GENERAL DESCRIPTION
The ME7806S N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
FEATURES
● RDS(ON) ≦8.5mΩ@VGS=10V
● RDS(ON) ≦16.5mΩ@VGS=4.5V
APPLICATIONS
● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC
PIN CONFIGURATION
(DFN(S) 3.3x3.3) Top View
e Ordering Information: ME7806S-G (Green product-Halogen free)
Absolute Maximum Ratings (TA =25℃ Unless Otherwise Noted)
Parameter Drain-Source Voltage
Gate-Source Voltage Con...
