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ME6986ED-G

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Dual N-Channel MOSFET


Description
ME6986ED/ME6986ED-G Dual N-Channel 20V(D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The ME6986ED is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited f...



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ME6986ED-G

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