ME6986ED

ME6986ED/ME6986ED-G Dual N-Channel 20V(D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The ME6986ED is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (TSSOP-8) Top View FEATURES ● RDS(ON)≦13.5mΩ@VGS=4.5V ● RDS(ON)≦18mΩ@VGS=2.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC Ordering Information: ME6986ED (Pb-free) ME6986...