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BT25T120CKR

Huajing Microelectronics

Silicon FS Trench IGBT


Description
Silicon FS Trench IGBT BT25T120 CKR ○R General Description: Using HUAJING's proprietary trench design, advanced FS(field stop) technology and integrated with Free Wheeling Diode, the 1200V Trench FS IGBT offers superior conduction and switching performances, high avalanche ruggedness. VCES IC Ptot (TC=25℃) VCE(SAT) 1200 V 25 A 312 W 1.95 V Features: l T...



Huajing Microelectronics

BT25T120CKR

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