BD539

BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD540 Series 45 W at 25°C Case Temperature 5 A Continuous Collector Current Up to 120 V VCEO rating B C E TO-220 PACKAGE (TOP VIEW) q q q 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD539 BD539A Collector-base voltage BD539B BD539C BD539D BD539 BD539A Collector-emitter voltage (see Note 1) BD539B BD539C BD539D Emitter-base voltage Continuous collector current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Operating free air temperature range Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. These values apply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC Ptot Ptot TA Tj Tstg TL VCEO VCBO SYMBOL VALUE 40 60 80 100 120 40 60 80 100 120 5 5 45 2 -65 to +150 -65 to +150 -65 to +150 260 V A W W °C °C °C °C V V UNIT PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms o...