Silicon N-Channel Power MOSFET HPU600R2K3DP
○R
General Description:
HPU600R2K3DP, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the double-shield Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturizati...