BD536

BD534/536/538 BD534/536/538 Medium Power Linear and Switching Applications Low Saturation Voltage Complement to BD533, BD535 and BD537 respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD534 : BD536 : BD538 : BD534 : BD536 : BD538 Value - 45 - 60 - 80 - 45 - 60 - 80 -5 -8 -1 50 150 - 65 ~ 150 Units V V V V V V V A A W °C °C VCEO Collector-Emitter Voltage VEBO IC IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current : BD534 : BD536 : BD538 : BD534 : BD536 : BD538 Test Condition VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCE = - 45V, VBE = 0 VCE = - 60V, VBE = 0 VCE = - 80V, VBE = 0 VEB = - 5V, IC = 0 VCE = -2 V, IC = - 500mA VCE = - 5V, IC = - 10mA VCE = - 2V, IC = - 2A 40 20 15 25 15 30 15 40 20 - 0.8 - 1.5 3 12 75 100 - 0.8 V V V MHz Min. Typ. Max. - 100 - 100 - 100 - 100 - 100 - 100 -1 Units µA µA µA µA µA µA mA ICES Collector Cut-off Current IEBO hFE Emitter Cut-off Current * DC Current Gain : ALL DEVICE : BD534/536 : BD538 : BD534/536 : BD538 : ALL DEVICE : ALL DEVICE hFE hFE Groups J K VCE = - 2V, IC = - 2A VCE = - 2V, IC = - 3A VCE = -2V, IC = - 2A VCE = - 2V, IC = - 3A IC = - 2A, IB = - 0.2A IC = - 6A, IB ...