RN2207~RN2209
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2207,RN2208,RN2209
Switching, Inverter Ci...
RN2207~RN2209
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT Process)
RN2207,RN2208,RN2209
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
Unit: mm
z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process z Complementary to RN1207~RN1209
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ)
RN2207 RN2208 RN2209
10 22 47
R2 (kΩ)
47 47 22
Absolute Maximum Ratings (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13g (typ.)
Characteristic
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage
Emitter-base voltage
Collector current Collector power dissipation Junction temperature Storage temperature range
RN2207 RN2208 RN2209
VCBO VCEO
VEBO
IC PC Tj Tstg
−50 −50 −6 −7 −15 −100 300 150 −55~150
V V
V
mA mW °C °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significa...