P-Channel Enhancement Mode MOSFET
ME8117A /ME8117A-G
GENERAL DESCRIPTION
The ME8117A-G is the P-Channel logic enhancem...
P-Channel Enhancement Mode MOSFET
ME8117A /ME8117A-G
GENERAL DESCRIPTION
The ME8117A-G is the P-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8) Top View
FEATURES
● RDS(ON)≦5.2mΩ@VGS=-10V ● RDS(ON)≦10.5mΩ@VGS=-4V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● LCD Display inverter
* The Ordering Information: ME8...