N- and P-Channel 100-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4956 is the N- and P-Channel logic enhancement mode power ...
N- and P-Channel 100-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4956 is the N- and P-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8) Top View
ME4956/ME4956-G
FEATURES
● RDS(ON)≦116mΩ@VGS=10V (N-Ch) ● RDS(ON)≦133mΩ@VGS=4.5V (N-Ch) ● RDS(ON)≦215mΩ@VGS=-10V (P-Ch) ● RDS(ON)≦225mΩ@VGS=-4.5V (P-Ch) ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management ● DC/DC Converter ● LCD TV & Monitor Display inverter ● C...
