DatasheetsPDF.com

ME4950-G

Part Number	ME4950-G
Manufacturer	Matsuki
Description	Dual N-Channel MOSFET
Published	Mar 22, 2018
Detailed Description	Dual N-Channel 100-V (D-S) MOSFET ME4950/ME4950-G GENERAL DESCRIPTION The ME4950 is the Dual N-Channel logic enhanceme...
Datasheet	ME4950-G PDF File

Overview

Dual N-Channel 100-V (D-S) MOSFET ME4950/ME4950-G GENERAL DESCRIPTION The ME4950 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION (SOP-8) Top View FEATURES ● RDS(ON)≦115mΩ@VGS=10V ● RDS(ON)≦137mΩ@VGS=4.
5V ● Super high density cell des...

Similar Datasheet

ME4950 Dual N-Channel MOSFET - Matsuki
ME4950-G Dual N-Channel MOSFET - Matsuki

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)