ME4970A

Dual N-Channel 30-V (D-S) MOSFET ME4970A /ME4970A-G GENERAL DESCRIPTION The ME4970A-G is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, FEATURES ● RDS(ON)≦14mΩ@VGS=10V ● RDS(ON)≦20mΩ@VGS=4.5V DMOS trench technology. This high density process is especially ● Super high density cell design for extremely low RDS(ON) tailored to minimize on-state resistance. These devices are ● Exceptional on-resistance and maximum DC current particularly suited for low voltage application such as cellular phone capability and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● DSC ● LCD Display inverter (SOP-8) Top View * The Orderin...