N- Channel 75-V (D-S) MOSFET
ME80N75T / ME80N75T-G
GENERAL DESCRIPTION
The ME80N75T is the N-Channel logic enhancement...
N- Channel 75-V (D-S) MOSFET
ME80N75T / ME80N75T-G
GENERAL DESCRIPTION
The ME80N75T is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
PIN CONFIGURATION
(TO-220) Top View
FEATURES
● RDS(ON)≦10mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management ● DC/DC Converter ● Load Switch
e Ordering Information: ME80N75T (Pb-free)
ME80N75T-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDSS
75
V
Gate-Source Voltage
VGSS
±25
V
Continuous Drain Current*
TC=25℃ TC=70℃
ID
93 78
A
Pulsed Drain Current
IDM 372
A
Maximum Power Dissipation
TC=25℃ TC=70℃
PD
200 140
W
Operating Junction and St...