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ME80N75F-G Dataheets PDF



Part Number ME80N75F-G
Manufacturers Matsuki
Logo Matsuki
Description N-Channel MOSFET
Datasheet ME80N75F-G DatasheetME80N75F-G Datasheet (PDF)

N- Channel 75-V (D-S) MOSFET ME80N75F / ME80N75F-G GENERAL DESCRIPTION The ME80N75F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION (TO-220F) Top View FEATURES ● RDS(ON)≦10mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICAT.

  ME80N75F-G   ME80N75F-G



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N- Channel 75-V (D-S) MOSFET ME80N75F / ME80N75F-G GENERAL DESCRIPTION The ME80N75F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION (TO-220F) Top View FEATURES ● RDS(ON)≦10mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter ● Load Switch * The Ordering Information: ME80N75F (Pb-free) ME80N75F-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25℃ TC=70℃ Pulsed Drain Current Single pulse Avalanche Current L=0.3mH Single pulse Avalanche Energy L=0.3mH Maximum Power Dissipation TC=25℃ TC=70℃ TC=25℃ TC=70℃ TC=25℃ TC=70℃ Jun.


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