Document
N- Channel 75-V (D-S) MOSFET
ME80N75F / ME80N75F-G
GENERAL DESCRIPTION
The ME80N75F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
PIN CONFIGURATION
(TO-220F) Top View
FEATURES
● RDS(ON)≦10mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management ● DC/DC Converter ● Load Switch
* The Ordering Information: ME80N75F (Pb-free) ME80N75F-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current
TC=25℃ TC=70℃
Pulsed Drain Current Single pulse Avalanche Current L=0.3mH Single pulse Avalanche Energy L=0.3mH Maximum Power Dissipation
TC=25℃ TC=70℃ TC=25℃ TC=70℃ TC=25℃ TC=70℃
Jun.