P- Channel 60-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME60P06T is the P-Channel logic enhancement mode power field effect...
P- Channel 60-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME60P06T is the P-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
PIN CONFIGURATION
(TO-220) Top View
ME60P06T/ME60P06T-G
FEATURES
● RDS(ON)≦16.5mΩ@VGS=-10V ● RDS(ON)≦20.5mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
Ordering Information: ME60P06T (Pb-free) ME60P06T-G (Green product-Halogen free )
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current*
TC=25℃ TC=70℃
Pulsed Drain Current Maximum Power Dissipation*
TC=25℃ TC=70℃
Operating Junction Temperature
Thermal Resistanc...
