N- Channel 40-V (D-S) MOSFET
ME60N04T/ME60N04T-G
GENERAL DESCRIPTION
The ME60N04T is the N-Channel logic enhancement m...
N- Channel 40-V (D-S) MOSFET
ME60N04T/ME60N04T-G
GENERAL DESCRIPTION
The ME60N04T is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
PIN CONFIGURATION
FEATURES
● RDS(ON)≦12mΩ@VGS=10V ● RDS(ON)≦17mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management ● DC/DC Converter ● Load Switch
(TO-220) Top View
* The Ordering Information: ME60N04T (Pb-free) ME60N04T-G (Green product-Halogen free)
Absolute Maximum(GrReeantpinrogdusct()TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current
TC=25℃ TC=70℃
Pulsed Drain Current Maximum Power Dissipation
TC=25℃ TC=70℃
Operating Junction Temperature
Thermal Resistance-Junction to Case*
Symbol...