Document
P- Channel 30-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME95P03 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(TO-252-3L) Top View
ME95P03/ME95P03-G
FEATURES
● RDS(ON)≦5.6mΩ@VGS=-20V ● RDS(ON)≦6mΩ@VGS=-10V ● RDS(ON)≦8mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
* The Ordering Information: ME95P03 (Pb-free) ME95P03-G (Green product-Halogen free.