ME7609D-G

ME7609D/ME7609D-G P-Channel 30-V (D-S) MOSFET, ESD Producted GENERAL DESCRIPTION The ME7609D P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON) ≦19.5mΩ@VGS=-10V ● RDS(ON) ≦40mΩ@VGS=-4.5V APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC PIN CONFIGURATION PowerDFN 5x6 e Ordering Information: ME7609D (Pb-free) ME7609D-G (Green product-Halogen free) Absolute Maximum Ratings (Tj=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltag...