ME70N03S

ME70N03S/ME70N03S-G 30V N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The ME70N03S is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are FEATURES ● RDS(ON)≦6.6mΩ@VGS=10V ● RDS(ON)≦11mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current particularly suited for low voltage application such as cellular capability phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (TO-252) Top View APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● DSC e Ordering Information:ME70N03S (Pb-free)...