Si4542DY

Si4542DY Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 30 0.025 at VGS = 10 V 0.035 at VGS = 4.5 V P-Channel - 30 0.032 at VGS = - 10 V 0.045 at VGS = - 4.5 V ID (A) 6.9 5.8 - 6.1 - 5.1 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 Ordering Information: Si4542DY-T1-E3 (Lead (Pb)-free) Si4542DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 S2 G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 - 30 Gate-Source Voltage VGS ± 20 ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 6.9 - 6.1 5.5 - 4.9 Pulsed Drain Current IDM 40 - 40 Continuous Source Current (Diode Conduction)a IS 1.7 - 1.7 Maximum Po...