SSM3J353F

MOSFETs Silicon P-Channel MOS (U-MOS) SSM3J353F 1. Applications Power Management Switches 2. Features (1) 4.0 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 274 mΩ (max) (@VGS = -4.0 V, ID = -0.5 A) RDS(ON) = 232 mΩ (max) (@VGS = -4.5 V, ID = -0.5 A) RDS(ON) = 150 mΩ (max) (@VGS = -10 V, ID = -2.0 A) 3. Packaging and Pin Assignment S-Mini SSM3J353F 1: Gate 2: Source 3: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-02 2016-12-19 Rev.2.0 SSM3J353F 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS -30 V Gate-source voltage VGSS -25 / +20 Drain current (DC) Drain current (pulsed) (Note 1) (Note 1), (Note 2) ID IDP -2.0 A -4.0 Power dissipation (Note 3) PD 600 mW Power dissipation t ≤ 1s (Note 3) 1200 Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (...