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ME40P03T Dataheets PDF



Part Number ME40P03T
Manufacturers Matsuki
Logo Matsuki
Description P-Channel MOSFET
Datasheet ME40P03T DatasheetME40P03T Datasheet (PDF)

P-Channel 30V (D-S) MOSFET ME40P03T/ME40P03T-G GENERAL DESCRIPTION The ME40P03T is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦11mΩ@VGS=-10V ● RDS(ON)≦16mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Ma.

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P-Channel 30V (D-S) MOSFET ME40P03T/ME40P03T-G GENERAL DESCRIPTION The ME40P03T is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦11mΩ@VGS=-10V ● RDS(ON)≦16mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter PIN CONFIGURATION (TO-220) Top View eOrdering Information: ME40P03T (Pb-free) ME40P03T-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Maximum Ratings Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current TC=25℃ TC=70℃ ID -68.6 -57.4 Pulsed Drain Current IDM -274 Maximum Power Dissipation .


ME12N15-G ME40P03T ME40P03T-G


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