Document
P-Channel 30V (D-S) MOSFET
ME40P03T/ME40P03T-G
GENERAL DESCRIPTION
The ME40P03T is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
FEATURES
● RDS(ON)≦11mΩ@VGS=-10V ● RDS(ON)≦16mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
PIN CONFIGURATION
(TO-220) Top View
eOrdering Information: ME40P03T (Pb-free)
ME40P03T-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Symbol
Maximum Ratings
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
TC=25℃ TC=70℃
ID
-68.6 -57.4
Pulsed Drain Current
IDM -274
Maximum Power Dissipation
.