ME12N15

N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION The ME12N15 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (TO-252-3L) Top View ME12N15 / ME12N15-G FEATURES ● RDS(ON)≦150mΩ@VGS=10V ● RDS(ON)≦250mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter ● Load Switch * Th Ordering Information: ME12N15 (Pb-free) ME12N15-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless ...