Document
ME90P03/ME90P03-G
30V P-Channel Enhancement Mode MOSFET
GENERAL DESCRIPTION
The ME90P03 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package.
FEATURES
RDS(ON) 6.2mΩ@VGS=-20V
RDS(ON) 7.6mΩ@VGS=-10V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Portable Equipment Battery Powered System DC/DC Converter Load Switch
PIN CONFIGURATION
(TO-252) Top View
e Ordering Information: ME90P03 (Pb-free)
ME90P03-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25 Unless .