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N-Channel 75-V (D-S) MOSFET
ME50N75T/ME50N75T-G
GENERAL DESCRIPTION
The ME50N75T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
FEATURES
● RDS(ON)≦26mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management ● DC/DC Converter ● Load Switch
PIN CONFIGURATION
(TO-220) Top View
e Ordering Information: ME50N75T (Pb-free)
ME50N75T-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Tc=25℃ TC=70℃
Pulsed Drain Current
Maximum Power Dissipation
TC=25℃ TC=70℃
Operating Junction and Storage Temperature Range
Thermal Resistance-Junction to Case*
* The device mounted on 1in2 FR4 .