ME50N06T

N-Channel 60-V (D-S) MOSFET ME50N06T/ME50N06T-G GENERAL DESCRIPTION The ME50N06T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦22mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter ● Load Switch PIN CONFIGURATION (TO-220) Top View e Ordering Information: ME50N06T (Pb-free) ME50N06T-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tc=25℃ TC=70℃ Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃ Operating Junction and Storage Temperature Range Thermal Resistance-Junction to Case* * The device mounted on 1in2 FR4 ...